Spin-filter devices based on resonant tunneling antisymmetrical magnetic/semiconductor hybrid structures
Identifieur interne : 00A686 ( Main/Repository ); précédent : 00A685; suivant : 00A687Spin-filter devices based on resonant tunneling antisymmetrical magnetic/semiconductor hybrid structures
Auteurs : RBID : Pascal:04-0132761Descripteurs français
- Pascal (Inist)
- 8575M, 7525, 7225H, Appareillage, Gallium arséniure, Dispositif effet tunnel résonnant, Polarisation spin électronique, Magnétoélectronique, Transport polarisé en spin, Indium composé, Semiconducteur III-V, Filtre, Effet tunnel résonnant, Structure magnétique, Matériau ferromagnétique, Gaz électron 2 dimensions, Admittance électrique.
English descriptors
- KwdEn :
- Electric admittance, Electron spin polarization, Ferromagnetic materials, Filters, Gallium arsenides, III-V semiconductors, Indium compounds, Instrumentation, Magnetic structure, Magnetoelectronics, Resonant tunneling devices, Resonant tunnelling, Spin polarized transport, Two-dimensional electron gas.
Abstract
Spin filter devices based on resonant tunneling antisymmetrical magnetic-barrier structures are proposed and the spin-polarization properties are described. These devices can be realized by depositing one or two ferromagnetic stripes with perpendicular magnetization on top of two-dimensional electron gas. It is remarkable that the spin-filter efficiency of the transmission probability and the conductance through these devices could be reached completely (∼100%) in resonance, and that constant voltage applied to the metallic stripe of the systems could tune the spin polarization. These interesting features may lead to a practical voltage controlled spin filter. © 2004 American Institute of Physics.
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Pascal:04-0132761Le document en format XML
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Xu</name><affiliation><inist:fA14 i1="01"><s1>Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nanometer Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, Peoples Republic of China</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>School of Electrical and Computer Engineering, University of Oklahoma, 202 West Boyd, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>School of Electrical and Computer Engineering, University of Oklahoma, 202 West Boyd, Norman</wicri:cityArea></affiliation><affiliation><inist:fA14 i1="03"><s1>Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nanometer Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, Peoples Republic of China</s1> </inist:fA14></affiliation></author><author><name sortKey="Zhang, Yafei" uniqKey="Zhang Y">Yafei Zhang</name><affiliation><inist:fA14 i1="01"><s1>Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nanometer Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, Peoples Republic of China</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0132761</idno><date when="2004-03-15">2004-03-15</date><idno type="stanalyst">PASCAL 04-0132761 AIP</idno><idno type="RBID">Pascal:04-0132761</idno><idno type="wicri:Area/Main/Corpus">00BD05</idno><idno type="wicri:Area/Main/Repository">00A686</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electric admittance</term><term>Electron spin polarization</term><term>Ferromagnetic materials</term><term>Filters</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Instrumentation</term><term>Magnetic structure</term><term>Magnetoelectronics</term><term>Resonant tunneling devices</term><term>Resonant tunnelling</term><term>Spin polarized transport</term><term>Two-dimensional electron gas</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8575M</term><term>7525</term><term>7225H</term><term>Appareillage</term><term>Gallium arséniure</term><term>Dispositif effet tunnel résonnant</term><term>Polarisation spin électronique</term><term>Magnétoélectronique</term><term>Transport polarisé en spin</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Filtre</term><term>Effet tunnel résonnant</term><term>Structure magnétique</term><term>Matériau ferromagnétique</term><term>Gaz électron 2 dimensions</term><term>Admittance électrique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Spin filter devices based on resonant tunneling antisymmetrical magnetic-barrier structures are proposed and the spin-polarization properties are described. These devices can be realized by depositing one or two ferromagnetic stripes with perpendicular magnetization on top of two-dimensional electron gas. It is remarkable that the spin-filter efficiency of the transmission probability and the conductance through these devices could be reached completely (∼100%) in resonance, and that constant voltage applied to the metallic stripe of the systems could tune the spin polarization. These interesting features may lead to a practical voltage controlled spin filter. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Spin-filter devices based on resonant tunneling antisymmetrical magnetic/semiconductor hybrid structures</s1></fA08><fA11 i1="01" i2="1"><s1>XU (H. Z.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZHANG (Yafei)</s1></fA11><fA14 i1="01"><s1>Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nanometer Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, Peoples Republic of China</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>School of Electrical and Computer Engineering, University of Oklahoma, 202 West Boyd, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nanometer Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, Peoples Republic of China</s1> </fA14><fA20><s1>1955-1957</s1></fA20><fA21><s1>2004-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0132761</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Spin filter devices based on resonant tunneling antisymmetrical magnetic-barrier structures are proposed and the spin-polarization properties are described. These devices can be realized by depositing one or two ferromagnetic stripes with perpendicular magnetization on top of two-dimensional electron gas. It is remarkable that the spin-filter efficiency of the transmission probability and the conductance through these devices could be reached completely (∼100%) in resonance, and that constant voltage applied to the metallic stripe of the systems could tune the spin polarization. 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